note: pins 1 & 2 must be electrically connected at the printed circuit board. ds30225 rev. 2 - 1 1 of 2 SBM835L www.diodes.com diodes incorporated SBM835L 8a low vf schottky barrier rectifier powermite 3 features single phase, half wave, 60hz, resistive or inductive load. for capacitive load, derate current by 20%. case: powermite 3 molded plastic terminals: solderable per mil-std-202, method 208 polarity: see diagram marking: type number, see also sheet 2 weight: 0.072 grams (approx.) mechanical data b c d e g j h k l m a p 12 3 pin 1 pin 2 pin 3, bottomside heat s ink c characteristic symbol value unit peak repetitive reverse voltage working peak reverse voltage dc blocking voltage v rrm v rwm v r 35 v rms reverse voltage v r(rms) 25 v average rectified output current @ t s = 88 c i o 8a non-repetitive peak forward surge current 8.3ms single half sine-wave superimposed on rated load (jedec method) @ t c = 88 c i fsm 75 a typical thermal resistance junction to case r jc 0.9 c/w typical thermal resistance junction to soldering point r js 3.2 c/w operating temperature range t j -65 to +125 c storage temperature range t stg -65 to +150 c guard ring die construction for transient protection low forward voltage drop for use in low voltage, high frequency inverters, free wheeling, and polarity protection applications plastic material: ul flammability classification rating 94v-0 t c u d o r p w e n maximum ratings @ t a = 25 c unless otherwise specified electrical characteristics @ t a = 25 c unless otherwise specified characteristic symbol min typ max unit test condition reverse breakdown voltage (note 1) v (br)r 35 v i r = 1ma forward voltage (note 1) v fm 0.47 0.38 0.51 0.41 v i f = 8a, t s = 25 c i f = 8a, t s = 125 c peak reverse current (note 1) i rm 0.07 7.5 1.4 35 ma t s = 25 c, v r = 35v t s = 100 c, v r = 35v powermite 3 dim min max a 4.03 4.09 b 6.40 6.61 c .889 nom d 1.83 nom e 1.10 1.14 g .178 nom h 5.01 5.17 j 4.37 4.43 k .178 nom l .71 .77 m .36 .46 p 1.73 1.83 all dimensions in mm notes: 1. short duration test pulse used to minimize self-heating effect. under development
ds30225 rev. 2 - 1 2 of 2 SBM835L www.diodes.com 0 5 10 15 20 25 30 35 i , instantaneous reverse current (ma) r v , instantaneous reverse voltage (v) r fi g .2 t y pical reverse characteristics t = 125oc j t = 100oc j t = 75oc j t = 25oc j 10 1.0 0.1 0.01 0.001 100 0 100 200 300 400 500 600 700 i , instantane o us f o rward current (a) f v , instantaneous forward voltage (v) f fig. 1 typical forward characteristics t = 125oc j t = 25oc j 10 0.1 1 0.01 0.001 0.0001 100 t = 75oc j 0 20 40 60 80 100 1 10 100 i , peak f o rward surge current (a) fsm number of cycles at 60 hz fig. 3 max non-repetitive peak fwd surge current single half-sine-wave (jedec method) t = 88c c 100 1000 10,000 0 35 30 25 20 15 10 5 c,juncti o n capacitance (pf) j v , reverse voltage (v) r fig. 4 typical junction capacitance vs. reverse voltag e f = 1mhz notes: 2. for packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. device packaging shipping SBM835L-13 powermite 3 5000/tape & reel ordering information (note 2) SBM835L = product type marking code = manufacturers code marking yyww = date code marking yy = last digit of year ex: 2 for 2002 ww = week code 01 to 52 yyww SBM835L marking information t c u d o r p w e n under development powermite is a registered trademark of microsemi corporation.
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